MT53E1G32D2FW-046 AUT:B vs MT53E1G32D2FW-046 Comparación
Comparación detallada lado a lado de MT53E1G32D2FW-046 AUT:B por Micron Technology y MT53E1G32D2FW-046 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT53E1G32D2FW-046 AUT:B - 32Gbit LPDDR4X DRAM | Micron
MT53E1G32D2FW-046 AUT:B ✓ ActivoMicron Technology
MT53E1G32D2FW-046 - 32Gbit LPDDR4X SDRAM 200-TFBGA | Micron
MT53E1G32D2FW-046 ✓ ActivoComparación de especificaciones
| Parámetro | MT53E1G32D2FW-046 AUT:B | MT53E1G32D2FW-046 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $273,51 | $295,93 |
| Tipo de memoria | SDRAM - Mobile LPDDR4X | Mobile LPDDR4X SDRAM |
| Tamaño de memoria | 32 Gbit (4 GB) | 32 Gbit (4 GB) |
| Organización de memoria | x32 Parallel | 1G x 32 (dual-die, 2 x 16-bit channels) |
| Clock Frequency | 2.133 GHz | 2133 MHz (2.133 GHz) |
| Access Time / Clock Cycle | 3.5 ns | — |
| Interfaz | Parallel | Parallel |
| Encapsulado | 200-TFBGA (10 mm x 14.5 mm) | 200-TFBGA (10 x 14.5 mm) |
| Temperatura de funcionamiento | -40C to +125C | — |
| Temperature Grade | Automotive (AUT) | — |
| Self-Refresh | Auto self-refresh | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Write Leveling | Yes | — |
| ZQ Calibration | Yes | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| VDDQ Supply Voltage | [DATA_NEEDED: VDDQ supply voltage] | — |
| VDD Supply Voltage | [DATA_NEEDED: VDD supply voltage] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| Velocidad de datos | — | 4266 Mb/s per pin |
| Access Time | — | 3.5 ns |
| Write Cycle Time | — | 18 ns |
| VDDQ I/O Voltage | — | 0.6 V |
| Ball Diameter | — | 0.40 mm (SMD balls) |
| Operating Temperature (AUT variant) | — | -40C to +125C |
| Die Revisions | — | :A (FBGA D9ZQX) and :B (FBGA D8CJB) |
| Características | — | Auto self-refresh, built-in temperature sensor, auto precharge, write leveling, ZQ calibration |
| MSL Rating | — | [DATA_NEEDED: moisture sensitivity level] |